V. A. Vekshin - Concepedia

Author

V. A. Vekshin

Physico-Technical Institute

Also Known As

V. A. Vekshin, V.A Vekshin, V.A. Vekshin, Vekshin, V. A.

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

Physico-Technical Institute Russian Academy of Sciences Ioffe Institute University of Fukui Leibniz University Hannover

About

V. A. Vekshin is an author at Physico-Technical Institute specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	8	8	982
2	Engineering	7	7	951
3	Materials Science	6	6	727
4	Physics	5	5	834
5	Materials Engineering	4	4	438

V. A. Vekshin

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Band Gap of Hexagonal InN and InGaN Alloys V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, physica status solidi (b) Optical MaterialsEngineeringOptical AbsorptionOptoelectronic DevicesBand Gap	2002	306
Experimental and theoretical studies of phonons in hexagonal InN V. Yu. Davydov, V. V. Emtsev, I. N. Goncharuk, Applied Physics Letters Materials ScienceSemiconductorsOptical MaterialsEngineeringPhysics	1999	260
Physical properties of InN with the band gap energy of 1.1 eV Takashi Inushima, V. V. Mamutin, V. A. Vekshin, Journal of Crystal Growth EngineeringPhysicsApplied PhysicsCondensed Matter PhysicsQuantum Materials	2001	224
Mie Resonances, Infrared Emission, and the Band Gap of InN T. V. Shubina, S. V. Ivanov, V. N. Jmerik, Physical Review Letters	2004	212
Plasma-assisted MBE growth and characterization of InN on sapphire T. V. Shubina, V. N. Jmerik, V. A. Vekshin, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringCrystal Growth TechnologyApplied Physics	2004	57
MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages V. V. Mamutin, V. A. Vekshin, V. Yu. Davydov, physica status solidi (a) Materials ScienceMaterials EngineeringHigh Temperature AnnealingEngineeringCrystalline Defects	1999	42
Mg-Doped Hexagonal InN/Al2O3 Films Grown by MBE V. V. Mamutin, V. A. Vekshin, V. Yu. Davydov, physica status solidi (a) Materials ScienceMaterials EngineeringInn Crystal QualityAluminium NitrideEngineering	1999	33
Radiation-induced defects in n-type GaN and InN V. V. Emtsev, V. Yu. Davydov, E. E. Häller, Physica B Condensed Matter PhysicsApplied PhysicsGan Power DeviceRadiation-induced DefectsCategoryiii-v Semiconductor	2001	31
Photoluminescence and Raman study of hexagonal InN and In‐rich InGaN alloys V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, physica status solidi (b) Materials ScienceIi-vi SemiconductorPhotoluminescenceX-ray SpectroscopyEngineering	2003	29
Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties V. V. Mamutin, T. V. Shubina, V. A. Vekshin, Applied Surface Science PhysicsCondensed Matter PhysicsMultilayer HeterostructuresTopological HeterostructuresHexagonal Inn/sapphire	2000	13

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