Physical Review Letters · 2004 · 212 citations · 15 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials PhysicsSpectroscopyInfrared SpectroscopyLuminescent MaterialsOptical Properties Of SolidsOptical SpectroscopySemiconductor NanomaterialsWide Band Gap SemiconductorsBand GapElectronic Band GapInfrared EmissionInfrared Emission SpectraMie ScatteringOptical AbsorptionOptical Properties Of ClustersSurface States
Mie resonances due to scattering or absorption of light in InN-containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than the currently accepted 0.7 eV. Microcathodoluminescence studies complemented by the imaging of metallic In have shown that bright infrared emission at 0.7-0.8 eV arises in a close vicinity of In inclusions and is likely associated with surface states at the metal/InN interfaces.
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Unusual properties of the fundamental band gap of InN
Junqiao Wu, W. Walukiewicz, K. M. Yu et al. · Applied Physics Letters · 2002 · 1.5K citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17
Optical band gap of indium nitride
T.L. Tansley, C. P. Foley · Journal of Applied Physics · 1986 · 606 citations
Natural Sciences, Materials Engineering, Materials Science +17