A. Vasson - Concepedia

Author

A. Vasson

Centre National de la Recherche Scientifique

Also Known As

A -M Vasson, A M Vasson, A Vasson, A-M Vasson, A-M. Vasson, A. M. Vasson, A. VASSON, A. Vasson, A.-. Vasson, A.-M Vasson

205

Publications

2.4K

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Université Clermont Auvergne Physico-Technical Institute Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Russian Academy of Sciences

About

A. Vasson is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	66	1.6K
2	Applied Physics	20	66	1.6K
3	Electrical Engineering	12	26	478
4	Natural Sciences	11	23	478
5	Chemistry	3	5	101

A. Vasson

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Mie Resonances, Infrared Emission, and the Band Gap of InN T. V. Shubina, S. V. Ivanov, V. N. Jmerik, Physical Review Letters	2004	212
Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates N. Antoine-Vincent, F. Natali, M. Mihailovic, Journal of Applied Physics Materials ScienceAluminium NitrideWide-bandgap SemiconductorOptical MaterialsReflectivity Experiments	2003	114
Observation of Rabi splitting in a bulk GaN microcavity grown on silicon N. Antoine-Vincent, F. Natali, David Byrne, Physical review. B, Condensed matter Wide-bandgap SemiconductorEngineeringCavity QedExciton-photon InteractionExperimental Observation	2003	80
Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon F. Sèmond, Ian R. Sellers, F. Natali, Applied Physics Letters Wide-bandgap SemiconductorEngineeringOptical PropertiesReflectance SpectraExciton Modes	2005	73
Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study J. Kreissl, W. Ulrici, M. El-Metoui, Physical review. B, Condensed matter EngineeringMagnetic ResonanceAbsorption SpectroscopyElectronic Excited StateMagnetoresistance	1996	68
Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption François Médard, J. Zúñiga‐Pérez, P. Disseix, Physical Review B Materials SciencePhotonicsQuantum PhotonicsExperimental ObservationLow Finesse Cavities	2009	53
Optical investigations in (In,Ga)As/GaAs quantum wells grown by metalorganic molecular-beam epitaxy J. Leymarie, C. Monier, A. Vasson, Physical review. B, Condensed matter Optical MaterialsEngineeringMombe TechniqueOptoelectronic DevicesSemiconductor Nanostructures	1995	41
Resonant Light Delay in GaN with Ballistic and Diffusive Propagation T. V. Shubina, M. M. Glazov, N. A. Gippius, Physical Review Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringQuantum PhotonicsEngineering	2008	37
Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells P. Disseix, J. Leymarie, A. Vasson, Physical review. B, Condensed matter Optical MaterialsEngineeringOptoelectronic DevicesElectronic PropertiesSemiconductor Nanostructures	1997	37
Strong coupling of light with<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>A</mml:mi></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>B</mml:mi></mml:math>excitons in GaN microcavities grown on silicon Ian R. Sellers, F. Sèmond, M. Leroux, Physical Review B Wide-bandgap SemiconductorEngineeringCavity QedStrong CouplingGan Microcavities	2006	33

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