InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, +5

Japanese Journal of Applied Physics

PhotonicsElectrical EngineeringEngineeringPhysicsIngan Multi-quantum-well +11

Optical band gap of indium nitride

T.L. Tansley, C. P. Foley

Journal of Applied Physics

SemiconductorsMaterials ScienceWide-bandgap SemiconductorOptical MaterialsReactive Radio-frequency Sputtering +12

Instability and Charge Density Wave of Metallic Quantum Chains on a Silicon Surface

Han Woong Yeom, Sakura Takeda, Eli Rotenberg, +8

Physical Review Letters

EngineeringSilicon On InsulatorTunneling MicroscopyNanoelectronicsCharge Density +14

Preparation and optical properties of Ga1−<i>x</i>In<i>x</i>N thin films

Kōzō Osamura, S. Naka, Yôtaro Murakami

Journal of Applied Physics

Wide-bandgap SemiconductorOptical MaterialsEngineeringThin Film Process TechnologyQuasibinary System +17

<i>Ab initio</i>phonon dispersions of wurtzite AlN, GaN, and InN

Claudia Bungaro, Krzysztof Rapcewicz, J. Bernholc

Physical review. B, Condensed matter

Materials ScienceAluminium NitrideWurtzite AlnWide-bandgap SemiconductorEngineering +11

Experimental and theoretical studies of phonons in hexagonal InN

V. Yu. Davydov, V. V. Emtsev, I. N. Goncharuk, +6

Applied Physics Letters

Materials ScienceSemiconductorsOptical MaterialsEngineeringPhysics +11

Electrical and Optical Properties of rf-Sputtered GaN and InN

H.J. Hovel, J. J. Cuomo

Applied Physics Letters

Wide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineeringRf Semiconductor +11

Phonon structure of InN grown by atomic layer epitaxy

Takashi Inushima, Tadashi Shiraishi, V. Yu. Davydov

Solid State Communications

Materials ScienceEngineeringPhonon StructureApplied PhysicsQuantum Materials +3

Electron mobility in indium nitride

T.L. Tansley, C. P. Foley

Electronics Letters

Materials ScienceSemiconductorsIonised ImpurityEngineeringRf Semiconductor +11

Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy

Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, +4

Applied Physics Letters

Aluminium NitrideWide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic Devices +14