Electron mobility in indium nitride

Abstract

Measurements of the transport properties of RF sputtered polycrystalline films of indium nitride are presented. The maximum electron mobility measured is 5000 cm2V−1s−1 at 150 K, and the lowest electron concentrations obtained are 5×1016 cm−3 at 300 K falling to a constant value of 3×1016 in the range 30–150 K. These results are significantly better than those hitherto reported. The temperature dependence of mobility is attributed to ionised impurity sscattering at low temperatures and space charge scattering at higher temperatures.