Shigeo Yamaguchi

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma et al. · Nature Materials · 2006 · 682 citations

Semiconductors, Materials Science, Aluminium Nitride +7

Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

Tetsuya Takeuchi, Christian Wetzel, Shigeo Yamaguchi et al. · Applied Physics Letters · 1998 · 614 citations

Wide-bandgap Semiconductor, Engineering, Piezoelectric Field +18

Low-barrier hydrogen bond in photoactive yellow protein

Shigeo Yamaguchi, Hironari Kamikubo, Kazuo Kurihara et al. · Proceedings of the National Academy of Sciences · 2009 · 210 citations · Full text

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

Motoaki Iwaya, Tetsuya Takeuchi, Shigeo Yamaguchi et al. · Japanese Journal of Applied Physics · 1998 · 192 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta et al. · Journal of Applied Physics · 1999 · 117 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +17