Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, +4

Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringSemiconductorsMolecular Beam EpitaxyEpitaxial Growth +15

Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy

Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, +4

Applied Physics Letters

Aluminium NitrideWide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic Devices +14

Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy

Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, +5

Journal of Crystal Growth

Materials ScienceMaterials EngineeringOptical MaterialsEngineeringOptical Properties +6

Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy

Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, +2

Applied Physics Letters

Materials ScienceCarrier GasElectrical EngineeringWide-bandgap SemiconductorEngineering +11

Structural Properties of Al_{1- x}In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy

Michihiko Kariya, Shugo Nitta, Shigeo Yamaguchi, +5

Japanese Journal of Applied Physics

Materials EngineeringMaterials ScienceSemiconductorsElectrical EngineeringStructural Properties +13

Observation of photoluminescence from Al1−xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy

Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, +4

Applied Physics Letters

Materials ScienceAluminium NitrideEpitaxial GrowthPhotoluminescenceEngineering +11

Mass transport and the reduction of threading dislocation in GaN

Shugo Nitta, Michihiko Kariya, Takayuki Kashima, +3

Applied Surface Science

Wide-bandgap SemiconductorMass TransportEngineeringDislocation InteractionPhysics +4

Control of strain in GaN using an In doping-induced hardening effect

Shigeo Yamaguchi, Michihiko Kariya, Takayuki Kashima, +5

Physical review. B, Condensed matter

Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering +11

Mosaic Structure of Ternary Al_1-xIn_xN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy

Michihiko Kariya, Shugo Nitta, Shigeo Yamaguchi, +2

Japanese Journal of Applied Physics

Aluminium NitrideWide-bandgap SemiconductorEngineeringNanoelectronicsGan Grown +14

Control of strain in GaN by a combination of H2 and N2 carrier gases

Shigeo Yamaguchi, Michihiko Kariya, Masayoshi Kosaki, +4

Journal of Applied Physics

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringCrystalline Defects +9