Structural Properties of Al_{1- x}In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy

Abstract

Michihiko KARIYA, Shugo NITTA, Shigeo YAMAGUCHI, Hisaki KATO, Tetsuya TAKEUCHI,Christian WETZEL, Hiroshi AMANO andIsamu AKASAKIDepartment ofElectrical and Electronic Engineering, Meijo University, 1-501Sl1iogamagucl1i, Tempaku-ku.Nagoya 468-8502.Japan(Received April 23, 1998; accepted for publication May 7,1998)Ah_xlnxN layers grown on GaN by metalorganic vapor phase epitaxy (MOVPE) have been structurally studied usingwand