Christian Wetzel - Concepedia

Author

Christian Wetzel

Also Known As

Acker, D., C Wetzel, C. M. Wetzel, C. Wetzel, CHRISTIAN WETZEL, Christian M Wetzel, Christian M. Wetzel, Christian Wetzel, Christian Wetzel (KIC InnoEnergy Explore House), Christian Wetzel Christian Wetzel

291

Publications

5.5K

Citations

H-Index

Concepts

All Affiliations

Rensselaer Polytechnic Institute Meijo University Lawrence Berkeley National Laboratory Technical University of Munich Kyma Technologies (United States)

About

Christian Wetzel is an author at Rensselaer Polytechnic Institute specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	34	75	4.2K
2	Applied Physics	33	73	4.1K
3	Natural Sciences	4	4	159
4	Social Sciences	1	1	18
5	Chemistry	1	1	44

Christian Wetzel

Publications

4.8K

Citations

H-Index

Page 1

	Year	Citations
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect Tetsuya Takeuchi, Christian Wetzel, Shigeo Yamaguchi, Applied Physics Letters Wide-bandgap SemiconductorEngineeringPiezoelectric FieldNanoelectronicsQuantum Materials	1998	614
On <i>p-</i>type doping in GaN—acceptor binding energies Stefan Fischer, Christian Wetzel, E. E. Häller, Applied Physics Letters SemiconductorsGa. MgElectrical EngineeringWide-bandgap SemiconductorEngineering	1995	262
Pressure Induced Deep Gap State of Oxygen in GaN Christian Wetzel, T. Suski, Joel W. Ager, Physical Review Letters SemiconductorsWide-bandgap SemiconductorSemiconductor TechnologyDeep Gap StateEngineering	1997	235
Options to reduce the environmental impacts of residential buildings in the European Union—Potential and costs Françoise Nemry, Andreas Uihlein, Cecilia Makishi Colodel, Energy and Buildings Built EnvironmentEnvironmental ImpactsEuropean Union—potentialGreen BuildingSustainable Building	2010	220
Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire Yufeng Li, Shi You, Mingwei Zhu, Applied Physics Letters White OledPlanar SapphireElectrical EngineeringSolid-state LightingEngineering	2011	201
Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN Motoaki Iwaya, Tetsuya Takeuchi, Shigeo Yamaguchi, Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringEtch Pit DensityEngineering	1998	192
Optical band gap in Ga1−xInxN (0&lt;x&lt;0.2) on GaN by photoreflection spectroscopy Christian Wetzel, Tetsuya Takeuchi, S. Yamaguchi, Applied Physics Letters Materials SciencePhotonicsEffective Band GapOptical MaterialsEngineering	1998	189
Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate Zhongda Li, John Waldron, Theeradetch Detchprohm, Applied Physics Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2013	124
Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringSemiconductorsMolecular Beam EpitaxyEpitaxial Growth	1999	117
Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, Applied Physics Letters Aluminium NitrideWide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic Devices	2000	108

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