Hisaki Kato - Concepedia

Author

Hisaki Kato

Toyoda Gosei (Japan)

Also Known As

H Kato, H. Kato, Hisaki Kato

Publications

642

Citations

H-Index

Concepts

All Affiliations

Toyoda Gosei (Japan)Meijo University Nagoya University

About

Hisaki Kato is an author at Toyoda Gosei (Japan) specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	614
2	Applied Physics	7	7	614
3	Electrical Engineering	5	5	465
4	Materials Engineering	4	4	312
5	Materials Science	3	3	187

Hisaki Kato

Publications

624

Citations

H-Index

Page 1

	Year	Citations
Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications Masayoshi Koike, Naoki Shibata, Hisaki Kato, IEEE Journal of Selected Topics in Quantum Electronics White OledElectrical EngineeringSolid-state LightingEngineeringApplied Physics	2002	192
Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE Norikatsu Koide, Hisaki Kato, M. Sassa, Journal of Crystal Growth Materials EngineeringSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1991	125
Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, Journal of Crystal Growth Materials ScienceMaterials EngineeringOptical MaterialsEngineeringOptical Properties	1998	98
Growth of GaN and AlGaN for UV/blue p-n junction diodes Isamu Akasaki, Hiroshi Amano, Hideki Murakami, Journal of Crystal Growth Wide-bandgap SemiconductorElectrical EngineeringEngineeringAluminum Gallium NitrideApplied Physics	1993	88
MOVPE growth of GaN on a misoriented sapphire substrate Kazumasa Hiramatsu, Hiroshi Amano, Isamu Akasaki, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringApplied PhysicsAluminum Gallium Nitride	1991	51
Structural Properties of Al<sub> 1- x</sub>In<sub> x</sub>N Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy Michihiko Kariya, Shugo Nitta, Shigeo Yamaguchi, Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceSemiconductorsElectrical EngineeringStructural Properties	1998	38
Light-Emitting Devices Based on Gallium Nitride and Related Compound Semiconductors Masayoshi Koike, Naoki Shibata, S. Yamasaki, MRS Proceedings Electrical EngineeringOptical MaterialsEngineeringSolid-state LightingApplied Physics	1995	22
“Loop-10” line-assisted clip closure method: closure of perforation in re-do peroral endoscopic myotomy Haruhiro Inoue, Yuto Shimamura, Mai Fukuda, VideoGIE	2023	10

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