Growth of GaN and AlGaN for UV/blue p-n junction diodes

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Materials Engineering, Materials Science, Electrical Engineering +15

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 1.9K citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15

Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

K. Hiramatsu, Shintaro Itoh, Hiroshi Amano et al. · Journal of Crystal Growth · 1991 · 296 citations

Materials Science, Materials Engineering, Electrical Engineering +9

Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED

Isamu Akasaki, Hiroshi Amano, M. Kito et al. · Journal of Luminescence · 1991 · 280 citations

Electrical Engineering, Mg-doped P-type Gan, Engineering +6

The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

Anri Watanabe, Tetsuya Takeuchi, Koji Hirosawa et al. · Journal of Crystal Growth · 1993 · 271 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8