Shortest wavelength semiconductor laser diode

Isamu Akasaki, S. Sota, Hiroshi Sakai, +3

Electronics Letters

PhotonicsElectrical EngineeringEngineeringPhysicsSemiconductor Lasers +9

<i>p</i>-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy

Toshiyuki Tanaka, A. Watanabe, Hiroshi Amano, +4

Applied Physics Letters

Materials ScienceMaterials EngineeringElectrical EngineeringAluminium NitrideEngineering +10

Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device

Isamu Akasaki, Hiroshi Amano, Shigetoshi Sota, +3

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorPhotonicsElectrical EngineeringEngineeringPhysics +12

Effects of surface treatments and metal work functions on electrical properties at <i>p</i>-GaN/metal interfaces

H. Ishikawa, Setsuko Kobayashi, Yasuo Koide, +5

Journal of Applied Physics

Materials ScienceSemiconductor TechnologyElectrical EngineeringChemical EngineeringEngineering +11

Schottky barriers and contact resistances on <i>p</i>-type GaN

Tomohiko Mori, Takahiro Kozawa, Takeshi Ohwaki, +6

Applied Physics Letters

Materials ScienceSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering +8

Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications

Masayoshi Koike, Naoki Shibata, Hisaki Kato, +1

IEEE Journal of Selected Topics in Quantum Electronics

White OledElectrical EngineeringSolid-state LightingEngineeringApplied Physics +10

A new traceability scheme for the development of international system-traceable persistent organic pollutant reference materials by quantitative nuclear magnetic resonance

Takeshi Saito, Toshihide Ihara, Masayoshi Koike, +4

Accreditation and Quality Assurance

Hazardous WasteEnvironmental ChemistryNew Traceability SchemeEngineeringEnvironmental Engineering +11

Dislocation Etch Pits in GaN Epitaxial Layers Grown on Sapphire Substrates

Takahiro Kozawa, Tetsu Kachi, Takeshi Ohwaki, +3

Journal of The Electrochemical Society

Materials ScienceMaterials EngineeringWide-bandgap SemiconductorEpitaxial GrowthEngineering +13

Ultrasoft-X-ray emission spectroscopy using a newly designed wavelength-dispersive spectrometer attached to a transmission electron microscope

Masami Terauchi, H. Takahashi, Nobuo Handa, +10

Journal of Electron Microscopy

X-ray SpectroscopyEngineeringMicroscopyUltrasoft-x-ray Emission SpectroscopyChemical Shift +18

GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy

Hiromitsu Sakai, Takashi Koide, H. Suzuki, +5

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorPhotonicsElectrical EngineeringSolid-state LightingHigh-quality Gan +9