H. Ishikawa

Effects of surface treatments and metal work functions on electrical properties at <i>p</i>-GaN/metal interfaces

H. Ishikawa, Setsuko Kobayashi, Yasuo Koide et al. · Journal of Applied Physics · 1997 · 220 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

The infrared optical functions of AlxGa1−xN determined by reflectance spectroscopy

Guolin Yu, H. Ishikawa, M. Umeno et al. · Applied Physics Letters · 1998 · 51 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Optical Materials +19

Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition

Takashi Egawa, Hideki Ohmura, H. Ishikawa et al. · Applied Physics Letters · 2002 · 36 citations

Materials Science, Aluminium Nitride, Electrical Engineering +14

Dependence of electrical properties on work functions of metals contacting to p-type GaN

Yasuo Koide, H. Ishikawa, S. Kobayashi et al. · Applied Surface Science · 1997 · 34 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +8

Effects of surface cleaning on electrical properties for Ni contacts to <i>p</i>-type ZnSe

H. Ishikawa, Katsuyuki Tsukui, Yasuo Koide et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 17 citations

Materials Science, Surface Characterization, Electrical Engineering +15