Motoaki Iwaya

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

Kazuhito Ban, Junichi Yamamoto, Kenichiro Takeda et al. · Applied Physics Express · 2011 · 285 citations

Engineering, Electrical Engineering, Materials Science +17

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

Cyril Pernot, Myung‐Hee Y. Kim, Shinya Fukahori et al. · Applied Physics Express · 2010 · 261 citations

Engineering, Electrical Engineering, Materials Science +17

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

Motoaki Iwaya, Tetsuya Takeuchi, Shigeo Yamaguchi et al. · Japanese Journal of Applied Physics · 1998 · 192 citations

Engineering, Materials Engineering, Materials Science +13

Stress and Defect Control in GaN Using Low Temperature Interlayers

Hiroshi Amano, Motoaki Iwaya, Takayuki Kashima et al. · Japanese Journal of Applied Physics · 1998 · 165 citations

Engineering, Materials Engineering, Materials Science +17

350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

Kazuyoshi Iida, Takeshi KAWASHIMA, Atsushi Miyazaki et al. · Japanese Journal of Applied Physics · 2004 · 164 citations

Engineering, Electrical Engineering, Materials Science +17