Takeshi KAWASHIMA

350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

Kazuyoshi Iida, Takeshi KAWASHIMA, Atsushi Miyazaki et al. · Japanese Journal of Applied Physics · 2004 · 164 citations

Engineering, Electrical Engineering, Materials Science +17

Grain Size Dependence of the Fracture Toughness of Silicon Nitride Ceramics

Takeshi KAWASHIMA, Hiromi Okamoto, Hideharu Yamamoto et al. · Journal of the Ceramic Society of Japan · 1991 · 136 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate

Yosuke Tsuchiya, Yoshizane Okadome, Akira Honshio et al. · Japanese Journal of Applied Physics · 2005 · 47 citations

Engineering, Materials Engineering, Materials Science +17

Laser diode of 350.9nm wavelength grown on sapphire substrate by MOVPE

Kazuyoshi Iida, Takeshi KAWASHIMA, Atsushi Miyazaki et al. · Journal of Crystal Growth · 2004 · 41 citations

Engineering, Materials Engineering, Materials Science +10

GaN-based surface-emitting laser with two-dimensional photonic crystal acting as distributed-feedback grating and optical cladding

Shoichi Kawashima, Takeshi KAWASHIMA, Yasuhiro Nagatomo et al. · Applied Physics Letters · 2010 · 40 citations

Engineering, Materials Engineering, Materials Science +17