Yoshizane Okadome

Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate

Yosuke Tsuchiya, Yoshizane Okadome, Akira Honshio et al. · Japanese Journal of Applied Physics · 2005 · 47 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

One‐step lateral growth for reduction in defect density of <i>a</i> ‐plane GaN on <i>r</i> ‐sapphire substrate and its application in light emitters

Daisuke Iida, Aya Miura, Yoshizane Okadome et al. · physica status solidi (a) · 2007 · 39 citations

Materials Science, Light Emitters, Electrical Engineering +15

Reduction in defect density over whole area of (1$ \bar 1 $00) <i>m</i> ‐plane GaN using one‐sidewall seeded epitaxial lateral overgrowth

T. Kawashima, Takeharu Nagai, Daisuke Iida et al. · physica status solidi (b) · 2007 · 30 citations

Sio 2, Semiconductor Technology, Electrical Engineering +12

Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates

T. Kawashima, Takeharu Nagai, Daisuke Iida et al. · Journal of Crystal Growth · 2006 · 16 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +7