Daisuke Iida

633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress

Daisuke Iida, Zhe Zhuang, Pavel Kirilenko et al. · Applied Physics Letters · 2020 · 139 citations · Full text

Materials Science, Electrical Engineering, Solid-state Lighting +13

The micro-LED roadmap: status quo and prospects

Chien‐Chung Lin, Yuh‐Renn Wu, Hao‐Chung Kuo et al. · Journal of Physics Photonics · 2023 · 111 citations · Full text

White Oled, Electrical Engineering, Solid-state Lighting +15

Study on the effect of size on InGaN red micro-LEDs

Ray‐Hua Horng, Chun-Xin Ye, Po‐Wei Chen et al. · Scientific Reports · 2022 · 101 citations · Full text

GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate

Yousuke KUWAHARA, Takahiro Fujii, Toru Sugiyama et al. · Applied Physics Express · 2011 · 95 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15

Demonstration of low forward voltage InGaN-based red LEDs

Daisuke Iida, Zhe Zhuang, Pavel Kirilenko et al. · Applied Physics Express · 2020 · 81 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +15