Zhe Zhuang

633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress

Daisuke Iida, Zhe Zhuang, Pavel Kirilenko et al. · Applied Physics Letters · 2020 · 139 citations · Full text

Materials Science, Electrical Engineering, Solid-state Lighting +13

Demonstration of low forward voltage InGaN-based red LEDs

Daisuke Iida, Zhe Zhuang, Pavel Kirilenko et al. · Applied Physics Express · 2020 · 81 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +15

InGaN-based red light-emitting diodes: from traditional to micro-LEDs

Zhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa · Japanese Journal of Applied Physics · 2021 · 78 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +17

High Color Rendering Index Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes

Zhe Zhuang, Xu Guo, Bin Liu et al. · Advanced Functional Materials · 2015 · 66 citations

Engineering, Optoelectronic Devices, Semiconductors +16

606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56%

Zhe Zhuang, Daisuke Iida, Martin Velazquez‐Rizo et al. · IEEE Electron Device Letters · 2021 · 54 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +17