Martin Velazquez‐Rizo

633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress

Daisuke Iida, Zhe Zhuang, Pavel Kirilenko et al. · Applied Physics Letters · 2020 · 139 citations · Full text

Materials Science, Electrical Engineering, Solid-state Lighting +13

Demonstration of low forward voltage InGaN-based red LEDs

Daisuke Iida, Zhe Zhuang, Pavel Kirilenko et al. · Applied Physics Express · 2020 · 81 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +15

606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56%

Zhe Zhuang, Daisuke Iida, Martin Velazquez‐Rizo et al. · IEEE Electron Device Letters · 2021 · 54 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +17

Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2

Daisuke Iida, Pavel Kirilenko, Martin Velazquez‐Rizo et al. · AIP Advances · 2022 · 49 citations · Full text

Engineering, Optoelectronic Devices, Electronic Devices +17

Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

Zhe Zhuang, Daisuke Iida, Pavel Kirilenko et al. · Optics Express · 2020 · 43 citations · Full text