Takashi Inushima - Concepedia

Author

Takashi Inushima

Tokai University

Also Known As

Inushima, T., T Inushima, T. Inushima, Takashi Inushima

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Tokai University Physico-Technical Institute Kanagawa Industrial Technology Center University of Tsukuba Semiconductor Energy Laboratory (Japan)

About

Takashi Inushima is an author at Tokai University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	25	1.2K
2	Applied Physics	17	24	1.2K
3	Electrical Engineering	5	5	173
4	Natural Sciences	3	3	51
5	Chemistry	1	1	25

Takashi Inushima

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Experimental and theoretical studies of phonons in hexagonal InN V. Yu. Davydov, V. V. Emtsev, I. N. Goncharuk, Applied Physics Letters Materials ScienceSemiconductorsOptical MaterialsEngineeringPhysics	1999	260
Physical properties of InN with the band gap energy of 1.1 eV Takashi Inushima, V. V. Mamutin, V. A. Vekshin, Journal of Crystal Growth EngineeringPhysicsApplied PhysicsCondensed Matter PhysicsQuantum Materials	2001	224
Phonon structure of InN grown by atomic layer epitaxy Takashi Inushima, Tadashi Shiraishi, V. Yu. Davydov Solid State Communications Materials ScienceEngineeringPhonon StructureApplied PhysicsQuantum Materials	1999	122
Optical properties of Si-doped InN grown on sapphire (0001) Takashi Inushima, Masataka Higashiwaki, Toshiaki Matsui Physical review. B, Condensed matter Intrinsic InnCategoryquantum ElectronicsFourier TransformOptical MaterialsEngineering	2003	119
Conductivity in boron-doped diamond Takashi Inushima Physical review. B, Condensed matter Diamond-like CarbonElectrical EngineeringEngineeringPhysicsNanoelectronics	2001	59
Characteristics of polycrystalline-Si thin film transistors fabricated by excimer laser annealing method Nobuo Kubo, N. Kusumoto, Takashi Inushima, IEEE Transactions on Electron Devices Optical MaterialsEngineeringPoly-si TftIntegrated CircuitsThin Film Process Technology	1994	45
Electron density dependence of the electronic structure of InN epitaxial layers grown on sapphire (0001) Takashi Inushima, Masataka Higashiwaki, Toshiaki Matsui, Physical Review B	2005	42
Enhancement of photosensitivity by ultraviolet irradiation and photoconductivity spectra of diamond thin films Rimantas Vaitkus, Takashi Inushima, Shunsuke Yamazaki Applied Physics Letters Materials ScienceDiamond-like CarbonUv Radiant IntensityCrystalline DiamondEngineering	1993	33
Phonons in Hexagonal InN. Experiment and Theory V. Yu. Davydov, A. A. Klochikhin, M. B. Smirnov, physica status solidi (b) Materials ScienceQuantum ScienceSemiconductorsOptical MaterialsEngineering	1999	31
KrF excimer laser annealed TFT with very high field-effect mobility of 329 cm/sup 2//V-s H. Zhang, N. Kusumoto, Takashi Inushima, IEEE Electron Device Letters Thin-film TransistorEngineeringLaser ApplicationsOptoelectronic DevicesThin Film Process Technology	1992	28

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