V. V. Emtsev - Concepedia

Author

V. V. Emtsev

Physico-Technical Institute ORCID

Also Known As

A.V. Mudryi, G. A. Oganesyan, V V Emtsev, V. V. Emtsev, V.V Emtsev, V.V. Emtsev, Vadim Emtsev, Vadim V. Emtsev

Publications

2.5K

Citations

H-Index

Concepts

All Affiliations

Physico-Technical Institute Leibniz University Hannover Kyoto Institute of Technology University of Fukui Friedrich Schiller University Jena

About

V. V. Emtsev is an author at Physico-Technical Institute specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	14	2.2K
2	Applied Physics	12	14	2.2K
3	Chemistry	3	3	41
4	Electrical Engineering	3	3	81
5	Natural Sciences	2	2	31

V. V. Emtsev

Publications

2.2K

Citations

H-Index

Page 1

	Year	Citations
Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap V. Yu. Davydov, A. A. Klochikhin, R. P. Seĭsyan, physica status solidi (b) Materials SciencePhotoluminescenceEngineeringPhysicsElectron Spectroscopy	2002	985
Band Gap of Hexagonal InN and InGaN Alloys V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, physica status solidi (b) Optical MaterialsEngineeringOptical AbsorptionOptoelectronic DevicesBand Gap	2002	306
Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1) V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, physica status solidi (b) Materials ScienceMaterials EngineeringEngineeringPhysicsCondensed Matter Physics	2002	286
Experimental and theoretical studies of phonons in hexagonal InN V. Yu. Davydov, V. V. Emtsev, I. N. Goncharuk, Applied Physics Letters Materials ScienceSemiconductorsOptical MaterialsEngineeringPhysics	1999	260
Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi I.D. Hawkins, А. R. Peaker, K. V. Emtsev, Physical Review B Materials ScienceImpurity AtomsGe CrystalsEngineeringPhysics	2004	114
Electronic properties of antimony-vacancy complex in Ge crystals А. R. Peaker, V. V. Litvinov, V. V. Emtsev Journal of Applied Physics SemiconductorsIi-vi SemiconductorTransition Metal ChalcogenidesEngineeringPhysics	2004	77
Point defects in gamma-irradiated n-GaN V. V. Emtsev, V. Yu. Davydov, W. V. Lundin, Semiconductor Science and Technology SemiconductorsSemiconductor TechnologyWide-bandgap SemiconductorPoint DefectsEngineering	2000	45
Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers N. M. Shmidt, D. V. Davydov, V. V. Emtsev, physica status solidi (b) SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1999	39
Photoluminescence and Raman study of hexagonal InN and In‐rich InGaN alloys V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, physica status solidi (b) Materials ScienceIi-vi SemiconductorPhotoluminescenceX-ray SpectroscopyEngineering	2003	29
Correlation of mosaic-structure peculiarities with electric characteristics and surface multifractal parameters for GaN epitaxial layers N. M. Shmidt, V. V. Emtsev, A D Kryzhanovsky, Nanotechnology Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEpitaxial GrowthEngineering	2001	23

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