А. R. Peaker

Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

L. Dobaczewski, А. R. Peaker, K. Bonde Nielsen · Journal of Applied Physics · 2004 · 301 citations

Wide-bandgap Semiconductor, Point Defects, Engineering +18

Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

Aimin Song, M. Missous, P. Omling et al. · Applied Physics Letters · 2003 · 226 citations

Engineering, Nanocomputing, Unidirectional Electron Flow +16

Laplace transform deep-level transient spectroscopic studies of defects in semiconductors

L. Dobaczewski, P. Kaczor, I.D. Hawkins et al. · Journal of Applied Physics · 1994 · 193 citations

Transient Grating, Engineering, Laplace Transform Method +16

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

А. R. Peaker, J. Coutinho · Journal of Applied Physics · 2018 · 119 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Semiconductor Technology +12

Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

I.D. Hawkins, А. R. Peaker, K. V. Emtsev et al. · Physical Review B · 2004 · 114 citations

Materials Science, Impurity Atoms, Ge Crystals +15