P. Kaczor

Laplace transform deep-level transient spectroscopic studies of defects in semiconductors

L. Dobaczewski, P. Kaczor, I.D. Hawkins et al. · Journal of Applied Physics · 1994 · 193 citations

Transient Grating, Engineering, Laplace Transform Method +16

Structure of the <i>DX</i> state formed by donors in (Al,Ga)As and Ga(As,P)

L. Dobaczewski, P. Kaczor, M. Missous et al. · Journal of Applied Physics · 1995 · 31 citations

Semiconductors, Defect Local Environment, Electrical Engineering +14

Ionization and capture kinetics of DX centres in AlGaAs and GaSb: approach for a negative-U defect

L. Dobaczewski, P. Kaczor · Semiconductor Science and Technology · 1991 · 21 citations

Engineering, Chemistry, Ion Process +25

Hole capture at the <i>DX</i>(Si) and <i>DX</i>(Te) defects in Al<i>x</i>Ga1−<i>x</i>As

L. Dobaczewski, P. Kaczor, Z. R. Żytkiewicz et al. · Journal of Applied Physics · 1992 · 17 citations

Materials Science, Aluminium Nitride, Ii-vi Semiconductor +13

Intra-shell transitions of 3D metal ions (Fe, Co, Ni) in II–VI wide-gap semiconductor alloys

M. Godlewski, K. Świątek, P. Kaczor et al. · Physica B Condensed Matter · 1999 · 14 citations

Materials Science, Materials Engineering, Metal Ions +8