I.D. Hawkins

Laplace transform deep-level transient spectroscopic studies of defects in semiconductors

L. Dobaczewski, P. Kaczor, I.D. Hawkins et al. · Journal of Applied Physics · 1994 · 193 citations

Natural Sciences, Materials Science, Semiconductor Materials +16

Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

I.D. Hawkins, А. R. Peaker, K. V. Emtsev et al. · Physical Review B · 2004 · 114 citations

Natural Sciences, Materials Science, Physics +17

Electronic properties of vacancy–oxygen complex in Ge crystals

I.D. Hawkins, А. R. Peaker, V. V. Litvinov et al. · Applied Physics Letters · 2002 · 73 citations

Natural Sciences, Chemistry, Physics +14

Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells

Michelle Vaqueiro‐Contreras, J. Coutinho, P. Santos et al. · Journal of Applied Physics · 2019 · 49 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Parallel receiver channel sounder for spatial and MIMO characterisation of the mobile radio channel

Sana Salous, P. Filippidis, R. Lewenz et al. · IEE Proceedings - Communications · 2005 · 43 citations

Engineering, Electrical Engineering, Antennas +16