Electronic properties of vacancy–oxygen complex in Ge crystals

I.D. Hawkins, А. R. Peaker, V. V. Litvinov, L. Dobaczewski, J. L. Lindström

Applied Physics Letters · 2002 · 73 citations · 10 references

Concepts

Abstract

It is argued that the vacancy–oxygen (VO) complex (A center) in Ge has three charge states: double negative, single negative, and neutral. Corresponding energy levels are located at Ec−0.21 eV (VO−−/−) and Ev+0.27 eV (VO−/0). An absorption line at 716 cm−1 has been assigned to the asymmetrical stretching vibration mode of the doubly negatively charged VO complex.

References

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