Experimental and theoretical studies of phonons in hexagonal InN

Abstract

The first- and second-order Raman scattering and IR reflection have been studied for hexagonal InN layers grown on (0001) and (11̄02) sapphire substrates. All six Raman-active optical phonons were observed and assigned: E2(low) at 87 cm−1, E2(high) at 488 cm−1, A1(TO) at 447 cm−1, E1(TO) at 476 cm−1, A1(LO) at 586 cm−1, and E1(LO) at 593 cm−1. The ratio between the InN static dielectric constants for the ordinary and extraordinary directions was found to be ε⊥0/ε∥0=0.91. The phonon dispersion curves, phonon density-of-state function, and lattice specific heat were calculated. The Debye temperature at 0 K for hexagonal InN was estimated to be 370 K.