Phonon structure of InN grown by atomic layer epitaxy

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations

Engineering, Materials Engineering, Materials Science +17

Phonon dispersion and Raman scattering in hexagonal GaN and AlN

V. Yu. Davydov, Yu. É. Kitaev, I. N. Goncharuk et al. · Physical review. B, Condensed matter · 1998 · 820 citations

Natural Sciences, Materials Science, Physics +17

Electron mobilities in gallium, indium, and aluminum nitrides

V.W.L. Chin, T.L. Tansley, Tanakorn Osotchan · Journal of Applied Physics · 1994 · 507 citations

Natural Sciences, Materials Science, Physics +17

Preparation and optical properties of Ga1−<i>x</i>In<i>x</i>N thin films

Kōzō Osamura, S. Naka, Yôtaro Murakami · Journal of Applied Physics · 1975 · 377 citations

Natural Sciences, Materials Science, Physics +17

Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN

P. Perlin, J. Camassel, W. Knap et al. · Applied Physics Letters · 1995 · 216 citations

Natural Sciences, Materials Science, Physics +13