Atomic Layer Epitaxy is a vapor-phase epitaxial growth technique that belongs to the class of atomic layer deposition methods, distinguished by its self-limiting surface reactions and sequential precursor exposure to achieve atomic-scale control over crystal layer formation.
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Extreme selectivity in the lift-off of epitaxial GaAs films
Eli Yablonovitch, T.J. Gmitter, J. P. Harbison et al. · Applied Physics Letters · 1987 · 806 citations · Full text
Surface Chemistry for Atomic Layer Growth
Steven M. George, A. W. Ott, J. W. Klaus · The Journal of Physical Chemistry · 1996 · 676 citations
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University of Helsinki
Helsinki, Finland
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University of Georgia
Athens, United States
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Raleigh, United States
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157 publications
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Centre National de la Recherche Scientifique
Paris, France
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Fujitsu (Japan)
Kawasaki, Japan
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Tokyo Institute of Technology
Tokyo, Japan
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Helsinki Institute of Physics
Helsinki, Finland
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- Applied Physics Letters
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- Journal of Crystal Growth
307 publications · 8.9K citations
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- Thin Solid Films
117 publications · 5.3K citations
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JJAP · 90 publications · 3.1K citations
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- Journal of Applied Physics
73 publications · 2.3K citations
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