A. W. Ott - Concepedia

Author

A. W. Ott

University of Colorado Boulder ORCID

Also Known As

A. Ott, A. W. OTT, A. W. Ott, A.W Ott, A.W. Ott, Andrew Ott, Andrew W. Ott, Andrin Ott, Sturges, Michael

Publications

Citations

H-Index

Concepts

All Affiliations

University of Colorado Boulder Colorado School of Mines Northwestern University

About

A. W. Ott is an author at University of Colorado Boulder specializing in engineering, surface science, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	18	3K
2	Applied Physics	9	9	1.9K
3	Business	1	1	37
4	Education	1	1	37
5	Management	1	1	37

A. W. Ott

Publications

Citations

H-Index

Page 1

	Year	Citations
Surface Chemistry for Atomic Layer Growth Steven M. George, A. W. Ott, J. W. Klaus The Journal of Physical Chemistry Materials ScienceEngineeringSurface ChemistrySurface AnalysisSurface Science	1996	669
Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry A. W. Ott, J. W. Klaus, J. M. Johnson, Thin Solid Films Materials ScienceAluminium NitrideChemical EngineeringEngineeringSurface Science	1997	508
Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence Anne C. Dillon, A. W. Ott, J. Douglas Way, Surface Science Materials ScienceAluminium NitrideChemical EngineeringEngineeringBinary Reaction Sequence	1995	458
A 65nm logic technology featuring 35nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ILD and 0.57 μm/sub 2/ SRAM cell Peng Bai, C. Auth, S. Balakrishnan, Electrical EngineeringPhysical Design (Electronics)EngineeringVlsi DesignChannel Strain	2005	230
Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates A. W. Ott, Robert P. H. Chang Materials Chemistry and Physics Materials ScienceEngineeringNanotechnologyOxide ElectronicsSurface Science	1999	153
Atomic layer growth of SiO2 on Si(100) using SiCl4 and H2O in a binary reaction sequence Ofer Sneh, Michael L. Wise, A. W. Ott, Surface Science Materials EngineeringMaterials ScienceEngineeringBinary Reaction SequenceSurface Science	1995	137
Atomic layer controlled deposition of Al2O3 films using binary reaction sequence chemistry A. W. Ott, Ken McCarley, J. W. Klaus, Applied Surface Science Materials ScienceAluminium NitrideChemical EngineeringEngineeringCorrosion	1996	130
Atomic layer controlled growth of SiO2 films using binary reaction sequence chemistry J. W. Klaus, A. W. Ott, J. M. Johnson, Applied Physics Letters EngineeringThin Film Process TechnologyChemical DepositionSilicon On InsulatorSio2 Films	1997	97
Atomic layer controlled growth of Si3N4 films using sequential surface reactions J. W. Klaus, A. W. Ott, Anne C. Dillon, Surface Science Materials ScienceSi3n4 FilmsEngineeringNanotechnologySurface Science	1998	96
NHC-Catalyzed Reactions of Aryloxyacetaldehydes: A Domino Elimination/Conjugate Addition/Acylation Process for the Synthesis of Substituted Coumarins Eric M. Phillips, Manabu Wadamoto, Howard S. Roth, Organic Letters Chemical EngineeringCross-coupling ReactionEngineeringHeterocyclicNhc-catalyzed Reactions	2008	85

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