Atsushi Koma - Concepedia

Author

Atsushi Koma

The University of Tokyo

Also Known As

Atsushi KOMA, Atsushi Koma, Atsushi Koma Atsushi Koma

152

Publications

4.3K

Citations

H-Index

Concepts

All Affiliations

The University of Tokyo Tokyo University of Science University of Tsukuba

About

Atsushi Koma is an author at The University of Tokyo specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	31	73	4K
2	Applied Physics	30	71	3.9K
3	Natural Sciences	11	12	392
4	Biochemistry	2	2	134
5	Medicine	1	1	15

Atsushi Koma

Publications

4.1K

Citations

H-Index

Page 1

	Year	Citations
Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system Atsushi Koma Thin Solid Films Materials ScienceMaterials EngineeringLattice-mismatched SystemEngineeringCrystal Growth Technology	1992	588
Van der Waals epitaxy for highly lattice-mismatched systems Atsushi Koma Journal of Crystal Growth EngineeringPhysicsApplied PhysicsCondensed Matter PhysicsMolecular Beam Epitaxy	1999	367
Fabrication and characterization of heterostructures with subnanometer thickness Atsushi Koma, K. Sunouchi, Takao Miyajima Microelectronic Engineering Materials ScienceEngineeringSubnanometer ThicknessApplied PhysicsMultilayer Heterostructures	1984	263
Ultrasharp interfaces grown with Van der Waals epitaxy Atsushi Koma, Kazuki Yoshimura Surface Science Materials ScienceEngineeringSurface ScienceApplied PhysicsUltrasharp Interfaces	1986	200
A Model to Explain the Effective Passivation of the GaAs Surface by (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub> Treatment Yasuo Nannichi, Jia-Fa Fan, Haruhiro Oigawa, Japanese Journal of Applied Physics SemiconductorsNh 4Chemical EngineeringEffective PassivationEngineering	1988	186
Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur-terminated GaAs{111} surfaces Keiji Ueno, Toshihiro Shimada, Koichiro Saiki, Applied Physics Letters Materials ScienceSemiconductorsOxide HeterostructuresSulfur-terminated GaasEngineering	1990	114
Molecular beam epitaxial growth of organic thin films Atsushi Koma Progress in Crystal Growth and Characterization of Materials Materials ScienceEngineeringOrganic ElectronicsSurface ScienceApplied Physics	1995	114
Studies on an (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-Treated GaAs Surface Using AES, LEELS and RHEED Haruhiro Oigawa, Jia-Fa Fan, Yasuo Nannichi, Japanese Journal of Applied Physics SemiconductorsMaterials ScienceNh 4Wide-bandgap SemiconductorEngineering	1989	107
Van der Waals Epitaxial Growth of C<sub>60</sub> Film on a Cleaved Face of MoS<sub>2</sub> Masatoshi Sakurai, Hirokazu Tada, Koichiro Saiki, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringCleaved FaceGood Heteroepitaxial GrowthEngineering	1991	104
Heteroepitaxy of a two-dimensional material on a three-dimensional material Atsushi Koma, Koichiro Saiki, Yasuhiro Sato Applied Surface Science Materials ScienceEngineeringTwo-dimensional MaterialTwo-dimensional MaterialsApplied Physics	1990	103

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