Concepedia
Statistics
Publications
29
Citations
1.8K
H-Index
20
Active since
1988
Affiliations
University of Tsukuba(Current)
The University of Tokyo
NTT (Japan)
Tohoku University
Tokyo Institute of Technology
Haruhiro Oigawa is an author at University of Tsukuba specializing in engineering, applied physics, and semiconductors.
Top concepts
EngineeringApplied PhysicsSemiconductorsSurface ScienceMaterial SciencePhysicsElectrical EngineeringChemistryCondensed Matter PhysicsMicroscopy
Publications per year
1988–2019
Universal Passivation Effect of (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub> Treatment on the Surface of III-V Compound Semiconductors
Haruhiro Oigawa, Jia-Fa Fan, Yasuo Nannichi et al. · Japanese Journal of Applied Physics · 1991 · 244 citations
Engineering, Semiconductor Device, Semiconductors +16
The Effect of (NH<sub>4</sub>)<sub>2</sub>S Treatment on the Interface Characteristics of GaAs MIS Structures
Jia-Fa Fan, Haruhiro Oigawa, Yasuo Nannichi · Japanese Journal of Applied Physics · 1988 · 216 citations
Oxygen-free Gaas Surface, Engineering, Gaas Mis Structures +16
A Model to Explain the Effective Passivation of the GaAs Surface by (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub> Treatment
Yasuo Nannichi, Jia-Fa Fan, Haruhiro Oigawa et al. · Japanese Journal of Applied Physics · 1988 · 186 citations
Semiconductors, Nh 4, Chemical Engineering +13
Metal-Dependent Schottky Barrier Height with the (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-Treated GaAs
Jia-Fa Fan, Haruhiro Oigawa, Yasuo Nannichi · Japanese Journal of Applied Physics · 1988 · 147 citations
Semiconductors, Nh 4, Electrical Engineering +10
Synchrotron radiation photoemission analysis for (NH4)2S<i>x</i>-treated GaAs
Hirohiko Sugahara, Masaharu Oshima, Haruhiro Oigawa et al. · Journal of Applied Physics · 1991 · 131 citations
Fermi-level Shift, Engineering, Optoelectronic Devices +16
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