Concepedia

Haruhiro Oigawa

HO

29

Publications

1.8K

Citations

20

H-Index

1988

Active since

Affiliations

University of Tsukuba(Current)

The University of Tokyo

Tohoku University

Tokyo Institute of Technology

Haruhiro Oigawa is an author at University of Tsukuba specializing in engineering, applied physics, and semiconductors.

Top concepts

EngineeringApplied PhysicsSemiconductorsSurface ScienceMaterial SciencePhysicsElectrical EngineeringChemistryCondensed Matter PhysicsMicroscopy

Publications per year

1988–2019

29

Publications

29

Universal Passivation Effect of (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub> Treatment on the Surface of III-V Compound Semiconductors

Haruhiro Oigawa, Jia-Fa Fan, Yasuo Nannichi et al. · Japanese Journal of Applied Physics · 1991 · 244 citations

Engineering, Semiconductor Device, Semiconductors +16

The Effect of (NH<sub>4</sub>)<sub>2</sub>S Treatment on the Interface Characteristics of GaAs MIS Structures

Jia-Fa Fan, Haruhiro Oigawa, Yasuo Nannichi · Japanese Journal of Applied Physics · 1988 · 216 citations

Oxygen-free Gaas Surface, Engineering, Gaas Mis Structures +16

A Model to Explain the Effective Passivation of the GaAs Surface by (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub> Treatment

Yasuo Nannichi, Jia-Fa Fan, Haruhiro Oigawa et al. · Japanese Journal of Applied Physics · 1988 · 186 citations

Semiconductors, Nh 4, Chemical Engineering +13

Metal-Dependent Schottky Barrier Height with the (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-Treated GaAs

Jia-Fa Fan, Haruhiro Oigawa, Yasuo Nannichi · Japanese Journal of Applied Physics · 1988 · 147 citations

Semiconductors, Nh 4, Electrical Engineering +10

Synchrotron radiation photoemission analysis for (NH4)2S<i>x</i>-treated GaAs

Hirohiko Sugahara, Masaharu Oshima, Haruhiro Oigawa et al. · Journal of Applied Physics · 1991 · 131 citations

Fermi-level Shift, Engineering, Optoelectronic Devices +16

Rows per page

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