Concepedia

Yasuo Nannichi

YN

49

Publications

2.5K

Citations

28

H-Index

1963

Active since

Affiliations

University of Tsukuba(Current)

Central Research Laboratories (United Kingdom)

Nippon Electric Glass (Japan)

The University of Tokyo

NTT (Japan)

Yasuo Nannichi is an author at University of Tsukuba specializing in applied physics, engineering, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceSemiconductorsSurface ScienceElectrical EngineeringPhysicsOptoelectronicsMicroelectronicsChemistry

Publications per year

1963–1996

49

Publications

49

Universal Passivation Effect of (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub> Treatment on the Surface of III-V Compound Semiconductors

Haruhiro Oigawa, Jia-Fa Fan, Yasuo Nannichi et al. · Japanese Journal of Applied Physics · 1991 · 244 citations

Engineering, Semiconductor Device, Semiconductors +16

The Effect of (NH<sub>4</sub>)<sub>2</sub>S Treatment on the Interface Characteristics of GaAs MIS Structures

Jia-Fa Fan, Haruhiro Oigawa, Yasuo Nannichi · Japanese Journal of Applied Physics · 1988 · 216 citations

Oxygen-free Gaas Surface, Engineering, Gaas Mis Structures +16

A Model to Explain the Effective Passivation of the GaAs Surface by (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub> Treatment

Yasuo Nannichi, Jia-Fa Fan, Haruhiro Oigawa et al. · Japanese Journal of Applied Physics · 1988 · 186 citations

Semiconductors, Nh 4, Chemical Engineering +13

Metal-Dependent Schottky Barrier Height with the (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-Treated GaAs

Jia-Fa Fan, Haruhiro Oigawa, Yasuo Nannichi · Japanese Journal of Applied Physics · 1988 · 147 citations

Semiconductors, Nh 4, Electrical Engineering +10

Synchrotron radiation photoemission analysis for (NH4)2S<i>x</i>-treated GaAs

Hirohiko Sugahara, Masaharu Oshima, Haruhiro Oigawa et al. · Journal of Applied Physics · 1991 · 131 citations

Fermi-level Shift, Engineering, Optoelectronic Devices +16

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