Yasuo Nannichi - Concepedia

Author

Yasuo Nannichi

University of Tsukuba

Also Known As

Y. NANNICHI, Y. Nannichi, YASUO NANNICHI, Yasuo NANNICHI, Yasuo Nannichi, Yasuo Nannichi Yasuo Nannichi

128

Publications

2.9K

Citations

H-Index

Concepts

All Affiliations

University of Tsukuba Central Research Laboratories (United Kingdom)Nippon Electric Glass (Japan)The University of Tokyo NTT (Japan)

About

Yasuo Nannichi is an author at University of Tsukuba specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	48	2.5K
2	Applied Physics	28	46	2.5K
3	Education	1	1	12
4	Natural Sciences	1	1	64
5	Chemical Engineering	1	1	186

Yasuo Nannichi

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
Universal Passivation Effect of (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub> Treatment on the Surface of III-V Compound Semiconductors Haruhiro Oigawa, Jia-Fa Fan, Yasuo Nannichi, Japanese Journal of Applied Physics EngineeringSemiconductor DeviceSemiconductorsIi-vi SemiconductorUniversal Passivation Effect	1991	244
The Effect of (NH<sub>4</sub>)<sub>2</sub>S Treatment on the Interface Characteristics of GaAs MIS Structures Jia-Fa Fan, Haruhiro Oigawa, Yasuo Nannichi Japanese Journal of Applied Physics Oxygen-free Gaas SurfaceEngineeringGaas Mis StructuresSemiconductor DeviceSemiconductors	1988	216
A Model to Explain the Effective Passivation of the GaAs Surface by (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub> Treatment Yasuo Nannichi, Jia-Fa Fan, Haruhiro Oigawa, Japanese Journal of Applied Physics SemiconductorsNh 4Chemical EngineeringEffective PassivationEngineering	1988	186
Metal-Dependent Schottky Barrier Height with the (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-Treated GaAs Jia-Fa Fan, Haruhiro Oigawa, Yasuo Nannichi Japanese Journal of Applied Physics SemiconductorsNh 4Electrical EngineeringSemiconductor TechnologyEngineering	1988	147
Synchrotron radiation photoemission analysis for (NH4)2S<i>x</i>-treated GaAs Hirohiko Sugahara, Masaharu Oshima, Haruhiro Oigawa, Journal of Applied Physics Fermi-level ShiftEngineeringOptoelectronic DevicesChemistrySemiconductor Nanostructures	1991	131
Ohmic Contacts to Solution-Grown Gallium Arsenide J. S. Harris, Yasuo Nannichi, G. L. Pearson, Journal of Applied Physics Materials ScienceElectrical EngineeringLiquid Epitaxy TechniquesEngineeringOhmic Contact Problems	1969	116
Studies on an (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-Treated GaAs Surface Using AES, LEELS and RHEED Haruhiro Oigawa, Jia-Fa Fan, Yasuo Nannichi, Japanese Journal of Applied Physics SemiconductorsMaterials ScienceNh 4Wide-bandgap SemiconductorEngineering	1989	107
Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited Films Fumio Hasegawa, Tsuyoshi Takahashi, Kiyokazu Kubo, Japanese Journal of Applied Physics Aluminium NitrideOptical MaterialsEngineeringThin Film Process TechnologyChemistry	1987	97
Effects of Be and Si on disordering of the AlAs/GaAs superlattice Mitsuo Kawabe, Norisato Shimizu, Fumio Hasegawa, Applied Physics Letters Materials ScienceSemiconductorsIi-vi SemiconductorEngineeringPhysics	1985	88
Degradation mechanism of (Al · Ga)As double-heterostructure laser diodes H. Yonezu, I. Sakuma, Taibun Kamejima, Applied Physics Letters Materials ScienceDh StructuresEngineeringCrystalline DefectsSemiconductor Lasers	1974	76

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