Metal-Dependent Schottky Barrier Height with the (NH₄)₂S_x-Treated GaAs

Abstract

Schottky barriers have been prepared on (NH 4 ) 2 S x -treated GaAs. The barrier height was observed to change remarkably with the kind of metals, which is predicted in the case of low interface state density. We found that the interface trap density was reduced to 9.8×10 12 cm -2 ·eV -1 by the treatment from 6.5×10 13 cm -2 ·eV -1 for the untreated one.