J. Camassel

Excitonic absorption edge of indium selenide

J. Camassel, P. Merle, H. Mathieu et al. · Physical review. B, Condensed matter · 1978 · 249 citations

Engineering, Absorption Spectroscopy, Electronic Structure +18

Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN

P. Perlin, J. Camassel, W. Knap et al. · Applied Physics Letters · 1995 · 216 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy

Peter J. Klar, H. Grüning, W. Heimbrodt et al. · Applied Physics Letters · 2000 · 182 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +15

Determination of the effective mass of GaN from infrared reflectivity and Hall effect

P. Perlin, E. Litwin‐Staszewska, B. Suchanek et al. · Applied Physics Letters · 1996 · 149 citations

Perpendicular Effective Mass, Semiconductor Technology, Electrical Engineering +8

Temperature dependence of the fundamental absorption edge of mercury cadmium telluride

J.P. Laurenti, J. Camassel, A. Bouhemadou et al. · Journal of Applied Physics · 1990 · 129 citations

Engineering, Temperature Dependence, Absorption Spectroscopy +19