H. Mathieu

Simple analytical method for calculating exciton binding energies in semiconductor quantum wells

H. Mathieu, Pierre Lefèbvre, Philippe Christol · Physical review. B, Condensed matter · 1992 · 306 citations

Engineering, Excitation Energy Transfer, Semiconductor Quantum Wells +20

Excitonic absorption edge of indium selenide

J. Camassel, P. Merle, H. Mathieu et al. · Physical review. B, Condensed matter · 1978 · 249 citations

Engineering, Absorption Spectroscopy, Electronic Structure +18

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Pierre Lefèbvre, A. Morel, Mathieu Gallart et al. · Applied Physics Letters · 2001 · 218 citations · Full text

Wide-bandgap Semiconductor, Photonics, Time-resolved Photoluminescence Spectroscopy +14

Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

Pierre Lefèbvre, J. Allègre, Bernard Gil et al. · Physical review. B, Condensed matter · 1999 · 161 citations · Full text

Wide-bandgap Semiconductor, Engineering, Time-resolved Photoluminescence +18

Unified formulation of excitonic absorption spectra of semiconductor quantum wells, superlattices, and quantum wires

Pierre Lefèbvre, Philippe Christol, H. Mathieu · Physical review. B, Condensed matter · 1993 · 100 citations

Engineering, Excitonic Absorption Spectra, Semiconductor Quantum Wells +20