J. Allègre

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Pierre Lefèbvre, A. Morel, Mathieu Gallart et al. · Applied Physics Letters · 2001 · 218 citations · Full text

Wide-bandgap Semiconductor, Photonics, Time-resolved Photoluminescence Spectroscopy +14

Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

Pierre Lefèbvre, J. Allègre, Bernard Gil et al. · Physical review. B, Condensed matter · 1999 · 161 citations · Full text

Wide-bandgap Semiconductor, Engineering, Time-resolved Photoluminescence +18

Effects of finite spin-orbit splitting on optical properties of spherical semiconductor quantum dots

Tristan Richard, Pierre Lefèbvre, H. Mathieu et al. · Physical review. B, Condensed matter · 1996 · 80 citations

Optical Materials, Engineering, Colloidal Nanocrystals +22

Band offsets and lattice-mismatch effects in strained-layer CdTe/ZnTe superlattices

H. Mathieu, J. Allègre, A. Chatt et al. · Physical review. B, Condensed matter · 1988 · 77 citations

Materials Science, Ii-vi Semiconductor, Engineering +9

Quantum confinement effects of CdS nanocrystals in a sodium borosilicate glass prepared by the sol-gel process

H. Mathieu, Tristan Richard, J. Allègre et al. · Journal of Applied Physics · 1995 · 74 citations

Materials Science, Engineering, Physics +14