H. Grüning

(Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen

Peter J. Klar, H. Grüning, J. Koch et al. · Physical review. B, Condensed matter · 2001 · 247 citations

Crystal Structure, Engineering, Isovalent Nitrogen +19

From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy

Peter J. Klar, H. Grüning, W. Heimbrodt et al. · Applied Physics Letters · 2000 · 182 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +15

Global changes of the band structure and the crystal lattice of Ga(N,As) due to hydrogenation

Peter J. Klar, H. Grüning, M. Güngerich et al. · Physical review. B, Condensed matter · 2003 · 45 citations

Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells

H. Grüning, K. Koháry, S. D. Baranovskiǐ et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 44 citations

Localized Excited State, Engineering, Excitation Energy Transfer +17

Monitoring the non-parabolicity of the conduction band in GaN0.018As0.982/GaAs quantum wells

Peter J. Klar, H. Grüning, W. Heimbrodt et al. · Solid-State Electronics · 2003 · 19 citations

Wide-bandgap Semiconductor, Electrical Engineering, Conduction Band +8