J. Koch

(Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen

Peter J. Klar, H. Grüning, J. Koch et al. · Physical review. B, Condensed matter · 2001 · 247 citations

Natural Sciences, Materials Science, Physics +17

From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy

Peter J. Klar, H. Grüning, W. Heimbrodt et al. · Applied Physics Letters · 2000 · 182 citations

Engineering, Materials Engineering, Materials Science +17

Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µm

F. Höhnsdorf, J. Koch, S. Leu et al. · Electronics Letters · 1999 · 169 citations

Engineering, Electrical Engineering, Materials Science +15

Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate

Bernardette Kunert, Kerstin Volz, J. Koch et al. · Applied Physics Letters · 2006 · 102 citations

Natural Sciences, Materials Science, Physics +17

Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)

F. Höhnsdorf, J. Koch, Carsten Agert et al. · Journal of Crystal Growth · 1998 · 76 citations

Engineering, Materials Engineering, Materials Science +14