F. Höhnsdorf

From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy

Peter J. Klar, H. Grüning, W. Heimbrodt et al. · Applied Physics Letters · 2000 · 182 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +15

Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µm

F. Höhnsdorf, J. Koch, S. Leu et al. · Electronics Letters · 1999 · 169 citations

Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)

F. Höhnsdorf, J. Koch, Carsten Agert et al. · Journal of Crystal Growth · 1998 · 76 citations

Materials Science, Ii-vi Semiconductor, Engineering +8

Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime

C. Ellmers, F. Höhnsdorf, J. Koch et al. · Applied Physics Letters · 1999 · 76 citations

Optical Materials, Engineering, Laser Science +17

Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime

Martin R. Hofmann, Anke Wagner, C. Ellmers et al. · Applied Physics Letters · 2001 · 75 citations

Engineering, Laser Science, Laser Applications +17