F. Höhnsdorf - Concepedia

Author

F. Höhnsdorf

Philipps University of Marburg

Also Known As

F Höhnsdorf, F. Hohnsdorf, F. Höhnsdorf, F. Höhnsdorf, Falko Höhnsdorf, Höhnsdorf, Falko

Publications

801

Citations

H-Index

Concepts

All Affiliations

Philipps University of Marburg Infineon Technologies (Germany)University of Arizona Optical Sciences (United States)University of Surrey

About

F. Höhnsdorf is an author at Philipps University of Marburg specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	595
2	Applied Physics	9	9	595
3	Chemistry	2	2	215
4	Natural Sciences	1	1	182
5	Chemical Engineering	1	1	33

F. Höhnsdorf

Publications

764

Citations

H-Index

Page 1

	Year	Citations
From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy Peter J. Klar, H. Grüning, W. Heimbrodt, Applied Physics Letters Materials ScienceSemiconductorsWide-bandgap SemiconductorEngineeringPhysics	2000	182
Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µm F. Höhnsdorf, J. Koch, S. Leu, Electronics Letters	1999	169
Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy) F. Höhnsdorf, J. Koch, Carsten Agert, Journal of Crystal Growth Materials ScienceIi-vi SemiconductorEngineeringPhysicsMultiple Quantum	1998	76
Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime C. Ellmers, F. Höhnsdorf, J. Koch, Applied Physics Letters Optical MaterialsEngineeringLaser ScienceLaser PhysicsLaser Applications	1999	76
Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime Martin R. Hofmann, Anke Wagner, C. Ellmers, Applied Physics Letters EngineeringLaser ScienceLaser ApplicationsLaser MaterialGain Spectra	2001	75
(GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range Anke Wagner, C. Ellmers, F. Höhnsdorf, Applied Physics Letters Broad Temperature RangePhotonicsEngineeringLaser ScienceOptical Properties	2000	53
Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers Martin R. Hofmann, Nils C. Gerhardt, Anke Wagner, IEEE Journal of Quantum Electronics PhotonicsUltrafast Emission DynamicsEngineeringPhotoluminescencePhysics	2002	44
C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs S. Leu, F. Höhnsdorf, W. Stolz, Journal of Crystal Growth Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringSurface Science	1998	35
MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors Kerstin Volz, Jörg Koch, F. Höhnsdorf, Journal of Crystal Growth Ii-vi SemiconductorChemical EngineeringEngineeringApplied PhysicsMovpe Growth	2009	33
Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane S. Leu, H. Protzmann, F. Höhnsdorf, Journal of Crystal Growth Materials ScienceIi-vi SemiconductorElectrical EngineeringEngineeringApplied Physics	1998	21

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