E. Litwin‐Staszewska

Author

Institute of High Pressure Physics ORCID

Also Known As

E Litwin-Staszewska, E. Litwin-Staszewska, E. Litwin‐Staszewska, Elzbieta Litwin-Staszewska, Elzbieta Litwin-staszewska, Elzbieta Litwin‐Staszewska, Elżbieta Litwin-Staszewska, Elżbieta Litwin‐Staszewska, Litwin-Staszewska, Elzbieta

125

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

Institute of High Pressure Physics Polish Academy of Sciences TopGaN (Poland)Institute of Physics University of Warsaw

About

E. Litwin‐Staszewska is an author at Institute of High Pressure Physics specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	24	46	1.8K
2	Engineering	21	41	1.6K
3	Electrical Engineering	18	24	822
4	Natural Sciences	2	2	458
5	Chemistry	2	2	153

E. Litwin‐Staszewska

Publications

Citations

H-Index

Page 1

	Year	Citations
Weak antilocalization and spin precession in quantum wells W. Knap, C. Skierbiszewski, A. Zduniak, Physical review. B, Condensed matter Charge ExcitationsEngineeringLow-dimensional MagnetismSpin SystemsWeak Localization	1996	421
Determination of the effective mass of GaN from infrared reflectivity and Hall effect P. Perlin, E. Litwin‐Staszewska, B. Suchanek, Applied Physics Letters Perpendicular Effective MassSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1996	149
Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives Marcin Zając, Robert Kucharski, Karolina Grabiańska, Progress in Crystal Growth and Characterization of Materials Basic Ammonothermal GrowthAluminum Gallium NitrideApplied PhysicsGallium OxideChemistry	2018	122
Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds Małgorzata Iwińska, R. Piotrzkowski, E. Litwin‐Staszewska, Applied Physics Express Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringAbstract Gan Crystals	2016	72
Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates B. Łucznik, B. Pastuszka, I. Grzegory, Journal of Crystal Growth Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringThick Gan Layers	2005	70
The Electron Mobility and Thermoelectric Power in InSb at Atmospheric and Hydrostatic Pressures E. Litwin‐Staszewska, W. Szymańska, R. Piotrzkowski physica status solidi (b) EngineeringElectrothermalExperimental ThermodynamicsElectron MobilityHydrostatic Pressures	1981	52
Homoepitaxial growth of HVPE-GaN doped with Si Małgorzata Iwińska, Tomasz Sochacki, Mikolaj Amilusik, Journal of Crystal Growth Applied PhysicsGan Power DeviceHomoepitaxial Growth	2016	44
High pressure and<i>DX</i>centers in heavily doped bulk GaAs T. Suski, R. Piotrzkowski, P. Wiśniewski, Physical review. B, Condensed matter SemiconductorsSemiconductor TechnologyPressure DependenceElectronic DevicesEngineering	1989	43
Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing E. Litwin‐Staszewska, T. Suski, R. Piotrzkowski, Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringShallow Mg Acceptors	2001	43
Lattice Constant of Doped Semiconductor M. Leszczyński, E. Litwin‐Staszewska, T. Suski, Acta Physica Polonica A	1995	42

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