E. Litwin‐Staszewska

Weak antilocalization and spin precession in quantum wells

W. Knap, C. Skierbiszewski, A. Zduniak et al. · Physical review. B, Condensed matter · 1996 · 421 citations · Full text

Charge Excitations, Engineering, Low-dimensional Magnetism +19

Determination of the effective mass of GaN from infrared reflectivity and Hall effect

P. Perlin, E. Litwin‐Staszewska, B. Suchanek et al. · Applied Physics Letters · 1996 · 149 citations

Perpendicular Effective Mass, Semiconductor Technology, Electrical Engineering +8

Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives

Marcin Zając, Robert Kucharski, Karolina Grabiańska et al. · Progress in Crystal Growth and Characterization of Materials · 2018 · 122 citations

Basic Ammonothermal Growth, Aluminum Gallium Nitride, Applied Physics +2

Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds

Małgorzata Iwińska, R. Piotrzkowski, E. Litwin‐Staszewska et al. · Applied Physics Express · 2016 · 72 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates

B. Łucznik, B. Pastuszka, I. Grzegory et al. · Journal of Crystal Growth · 2005 · 70 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +8