Małgorzata Iwińska

Author

Małgorzata Iwińska

Institute of High Pressure Physics ORCID

Also Known As

Iwińska, Małgorzata, M Iwinska, M. Iwinska, M. Iwińska, Magorzata Iwińska, Malgorzata Iwinska, Malgorzata Iwińska, Małgorzata Iwinska, Małgorzata Iwińska

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Institute of High Pressure Physics Polish Academy of Sciences Nagoya University Ammono (Poland)TopGaN (Poland)

About

Małgorzata Iwińska is an author at Institute of High Pressure Physics specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	20	33	1K
2	Engineering	18	27	850
3	Electrical Engineering	14	17	609
4	Chemistry	4	4	109
5	Natural Sciences	3	3	83

Małgorzata Iwińska

Publications

Citations

H-Index

Page 1

	Year	Citations
Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds Michał Boćkowski, Małgorzata Iwińska, Mikolaj Amilusik, Semiconductor Science and Technology Future PerspectivesEngineeringCrystal Growth TechnologyGallium Nitride CrystalsOptoelectronic Devices	2016	143
Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds Małgorzata Iwińska, R. Piotrzkowski, E. Litwin‐Staszewska, Applied Physics Express Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringAbstract Gan Crystals	2016	72
High Pressure Processing of Ion Implanted GaN Kacper Sierakowski, Paweł Kwiatkowski, Małgorzata Iwińska, Electronics Materials ScienceSemiconductorsElectrical EngineeringWide-bandgap SemiconductorEngineering	2020	63
Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing Hideki Sakurai, Tetsuo Narita, Masato Omori, Applied Physics Express Materials ScienceMaterials EngineeringElectrical EngineeringHomoepitaxial Gan LayerEngineering	2020	57
Investigation of thermal properties of mid-infrared AlGaAs/GaAs quantum cascade lasers Kamil Pierściński, Dorota Pierścińska, Małgorzata Iwińska, Journal of Applied Physics Categoryquantum ElectronicsHigh ResolutionEngineeringLaser ScienceNumerical Thermal Model	2012	47
Homoepitaxial growth of HVPE-GaN doped with Si Małgorzata Iwińska, Tomasz Sochacki, Mikolaj Amilusik, Journal of Crystal Growth Applied PhysicsGan Power DeviceHomoepitaxial Growth	2016	44
GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices Karolina Grabiańska, Aneta Sidor, Michał Boćkowski, Electronics Wide-bandgap SemiconductorEngineeringElectronic DevicesMaterials ScienceMaterials Engineering	2020	44
Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals Michał Boćkowski, Małgorzata Iwińska, Mikolaj Amilusik, Journal of Crystal Growth SemiconductorsMaterials EngineeringMaterials ScienceSemiconductor TechnologyEngineering	2018	39
Crystal growth of HVPE-GaN doped with germanium Małgorzata Iwińska, Nao Takekawa, V.Yu. Ivanov, Journal of Crystal Growth Applied PhysicsGan Power Device	2017	37
The effect of annealing on photoluminescence from defects in ammonothermal GaN M. A. Reshchikov, D. O. Demchenko, D. Ye, Journal of Applied Physics Wide-bandgap SemiconductorGallium VacancyOptical MaterialsEngineeringVga-3hi Complex	2022	33

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