Michał Boćkowski

Lattice parameters of gallium nitride

M. Leszczyński, H. Teisseyre, T. Suski et al. · Applied Physics Letters · 1996 · 409 citations

Materials Science, Aluminium Nitride, Engineering +10

Mechanism of yellow luminescence in GaN

T. Suski, P. Perlin, H. Teisseyre et al. · Applied Physics Letters · 1995 · 216 citations

Materials Science, Photoluminescence, Engineering +11

Thermal conductivity of GaN crystals in 4.2–300 K range

A. Jeżowski, B. A. Danilchenko, Michał Boćkowski et al. · Solid State Communications · 2003 · 177 citations

Engineering, Applied Physics, Gan Power Device +3

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

Hideki Sakurai, Masato Omori, Shinji Yamada et al. · Applied Physics Letters · 2019 · 168 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Michał Boćkowski, Małgorzata Iwińska, Mikolaj Amilusik et al. · Semiconductor Science and Technology · 2016 · 143 citations

Future Perspectives, Engineering, Crystal Growth Technology +17