B. A. Danilchenko

Thermal conductivity of GaN crystals in 4.2–300 K range

A. Jeżowski, B. A. Danilchenko, Michał Boćkowski et al. · Solid State Communications · 2003 · 177 citations

Engineering, Applied Physics, Gan Power Device +3

Heat capacity and phonon mean free path of wurtzite GaN

B. A. Danilchenko, T. Paszkiewicz, S. Wolski et al. · Applied Physics Letters · 2006 · 89 citations · Full text

Effects ofγ-irradiation on AlGaN/GaN-based HEMTs

S. А. Vitusevich, N. Klein, A. E. Belyaev et al. · physica status solidi (a) · 2003 · 58 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +15

Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation

A. M. Kurakin, S. А. Vitusevich, Serhiy Danylyuk et al. · Journal of Applied Physics · 2008 · 50 citations · Full text

Engineering, Irradiation Dose, Charge Transport +17

Thermal conductivity of GaN crystals grown by high pressure method

A. Jeżowski, P. Stachowiak, T. Plackowski et al. · physica status solidi (b) · 2003 · 43 citations

Materials Science, High Temperature Materials, Point Defects +13