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Effects ofγ-irradiation on AlGaN/GaN-based HEMTs
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2003
Year
Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringEffects Ofγ-irradiationChannel ConductivityElectronic EngineeringApplied Physicsγ-Ray Radiation EffectAluminum Gallium NitrideSingle Event EffectsRadiation TransportGan Power DeviceIntegrated CircuitsChannel ConductanceMicroelectronicsCategoryiii-v SemiconductorSemiconductor Device
γ-ray radiation effect has been studied on transport and noise properties of high electron mobility transistors (HEMTs) with gate lengths in the range from 350 to 150 nm at room temperature. Current–voltage (I–V) characteristics of the devices demonstrate higher radiation hardness to 60Co γ-rays up to doses of 109 Rad at larger gate lengths. This confirms the very important role of surface passivation for channel transport of the HEMTs. The deviation of the I–V characteristics parameters saturated current, transconductance, channel conductance, and threshold voltage does not exceed 20% at highest radiation dose. The noise spectra of pre-irradiated devices and after γ-irradiation show different frequency dependences corresponding to different fluctuation processes in the HEMTs. The results are confirmed by dynamic current measurements of the channel conductivity.