A. E. Belyaev - Concepedia

Author

A. E. Belyaev

V.E. Lashkaryov Institute of Semiconductor Physics ORCID

Also Known As

A Belyaev, A E Belyaev, A. Belyaev, A. E. BELYAEV, A. E. Belyaev, A. I. Belyaev, A.E Belyaev, A.E. BELYAEV, A.E. Belyaev, Alexander Belyaev

275

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

V.E. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine Forschungszentrum Jülich University of Arkansas at Fayetteville University of Nottingham

About

A. E. Belyaev is an author at V.E. Lashkaryov Institute of Semiconductor Physics specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	41	1.1K
2	Applied Physics	19	37	995
3	Natural Sciences	1	1	27
4	Biomedical Engineering	1	1	66
5	Chemical Engineering	1	1	27

A. E. Belyaev

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Crack detection and analyses using resonance ultrasonic vibrations in full-size crystalline silicon wafers A. E. Belyaev, O. Polupan, William J. Dallas, Applied Physics Letters Resonance Ultrasonic VibrationsVibrationsEngineeringSilicon DebuggingMechanical Engineering	2006	73
Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants Oleksandr Gryshkov, N.I. Klyui, V.P. Temchenko, Materials Science and Engineering C Materials ScienceTissue EngineeringProspective MaterialsEngineeringCeramics	2016	66
Effects ofγ-irradiation on AlGaN/GaN-based HEMTs S. А. Vitusevich, N. Klein, A. E. Belyaev, physica status solidi (a) Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringEffects Ofγ-irradiation	2003	58
Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures C. T. Foxon, A. E. Belyaev, Lixia Zhao, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Wide-bandgap SemiconductorCurrent–voltage InstabilitiesElectrical EngineeringSemiconductor TechnologyEngineering	2003	58
Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels S. А. Vitusevich, Serhiy Danylyuk, N. Klein, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2003	56
Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation A. M. Kurakin, S. А. Vitusevich, Serhiy Danylyuk, Journal of Applied Physics EngineeringIrradiation DoseCharge TransportElectron SpectroscopyNanoelectronics	2008	50
Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures A. M. Kurakin, S. А. Vitusevich, Serhiy Danylyuk, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorQuantum Confinement EffectEngineeringPhysics	2009	44
Resonance ultrasonic vibration diagnostics of elastic stress in full-size silicon wafers A. E. Belyaev, O. Polupan, S. Ostapenko, Semiconductor Science and Technology Elastic StressEngineeringMechanical EngineeringResidual StressResonance Vibration Approach	2006	44
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices V.P. Kladko, P. M. Lytvyn, N. V. Safriuk, Nanoscale Research Letters	2012	42
Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. <b>81</b>, 1729 (2002)] A. E. Belyaev, C. T. Foxon, O. Makarovsky, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringTunneling MicroscopyPhysics	2003	41

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