A. M. Kurakin - Concepedia

Author

A. M. Kurakin

Forschungszentrum Jülich

Also Known As

A M Kurakin, A. M. KURAKIN, A. M. Kurakin, A.M. Kurakin, Andrey M. Kurakin

Publications

319

Citations

H-Index

Concepts

All Affiliations

Forschungszentrum Jülich V.E. Lashkaryov Institute of Semiconductor Physics Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Centre National de la Recherche Scientifique Institute of Physics

About

A. M. Kurakin is an author at Forschungszentrum Jülich specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	253
2	Applied Physics	7	7	253
3	Electrical Engineering	5	5	178
4	Physics	5	5	164
5	Condensed Matter Physics	3	3	102

A. M. Kurakin

Publications

253

Citations

H-Index

Page 1

	Year	Citations
Effects ofγ-irradiation on AlGaN/GaN-based HEMTs S. А. Vitusevich, N. Klein, A. E. Belyaev, physica status solidi (a) Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringEffects Ofγ-irradiation	2003	58
Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation A. M. Kurakin, S. А. Vitusevich, Serhiy Danylyuk, Journal of Applied Physics EngineeringIrradiation DoseCharge TransportElectron SpectroscopyNanoelectronics	2008	50
Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures A. M. Kurakin, S. А. Vitusevich, Serhiy Danylyuk, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorQuantum Confinement EffectEngineeringPhysics	2009	44
AlGaN/GaN High Electron Mobility Transistor Structures: Self-Heating Effect and Performance Degradation S. А. Vitusevich, A. M. Kurakin, N. Klein, IEEE Transactions on Device and Materials Reliability SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2008	32
Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation S. А. Vitusevich, A. M. Kurakin, A. E. Belyaev, Applied Surface Science EngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceCategoryiii-v Semiconductor	2008	31
Mechanisms of current formation in resonant tunneling AlN∕GaN heterostructures M. V. Petrychuk, A. E. Belyaev, A. M. Kurakin, Applied Physics Letters Electrical EngineeringEngineeringTunneling MicroscopyPhysicsAln∕gan Heterostructures	2007	26
Capacitance characterization of AlN/GaN double‐barrier resonant tunnelling diodes A. M. Kurakin, S. А. Vitusevich, Serhiy Danylyuk, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	2006	12

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