Publication | Open Access
Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures
44
Citations
34
References
2009
Year
SemiconductorsWide-bandgap SemiconductorQuantum Confinement EffectEngineeringPhysicsTheoretical InvestigationBarrier LayerApplied PhysicsCondensed Matter PhysicsQuantum MaterialsAluminum Gallium NitrideGan Power DeviceEffective MassMultilayer HeterostructuresCategoryiii-v SemiconductorUndoped Algan/ganAlgan/gan Heterostructures
We report the results of direct measurements and a theoretical investigation of the in-plane effective mass in the two-dimensional electron gas of nominally undoped AlGaN/GaN heterostructures with a different degree of quantum confinement. It is shown that in most cases the conduction band nonparabolicity effect is overestimated and the electron wave-function penetration into the barrier layer should be taken into account. The contribution of the wave-function hybridization is determined to play the dominant role. The band edge effective mass value is deduced to be (0.2±0.01)m0.
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