Journal of Applied Physics · 2009 · 45 citations · 34 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsQuantum ConfinementSemiconductor HeterostructuresSemiconductor PhysicsTwo-dimensional SemiconductorsWide Band Gap SemiconductorsWide-bandgap SemiconductorsConduction BandEffective MassElectron Penetration DepthHeterostructuresQuantum Confinement EffectsTwo-dimensional Electron GasesTwo-dimensional Electron SystemsTwo-dimensional Semiconductor Heterostructures
We report the results of direct measurements and a theoretical investigation of the in-plane effective mass in the two-dimensional electron gas of nominally undoped AlGaN/GaN heterostructures with a different degree of quantum confinement. It is shown that in most cases the conduction band nonparabolicity effect is overestimated and the electron wave-function penetration into the barrier layer should be taken into account. The contribution of the wave-function hybridization is determined to play the dominant role. The band edge effective mass value is deduced to be (0.2±0.01)m0.
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Electronic properties of two-dimensional systems
Tsuneya Ando, A. B. Fowler, Frank Stern · Reviews of Modern Physics · 1982 · 7.4K citations
Natural Sciences, Chemistry, Physics +16
Band parameters for nitrogen-containing semiconductors
I. Vurgaftman, J. R. Meyer · Journal of Applied Physics · 2003 · 2.7K citations
<i>Wave Mechanics Applied to Semiconductor Heterostructures</i>
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