Applied Physics Letters · 1996 · 418 citations · 0 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsCrystal StructureSemiconductor MaterialsCrystal ChemistrySemiconductor Crystal GrowthSemiconductor DefectsSemiconductor PhysicsX-ray CrystallographyX-ray DiffractionGallium ArsenideGallium NitrideGallium Nitride Crystal GrowthHeteroepitaxial GrowthHigh-resolution X-ray DiffractionLattice ParametersSilicon CarbideStructural Defects
Lattice parameters of gallium nitride were measured using high-resolution x-ray diffraction. The following samples were examined: (i) single crystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers, (iii) heteroepitaxial layers (wurtzite structure) on silicon carbide, on sapphire, and on gallium arsenide, (iv) cubic gallium nitride layers on gallium arsenide. The differences between the samples are discussed in terms of their concentrations of free electrons and structural defects.