Jacek Baranowski

Observation of Native Ga Vacancies in GaN by Positron Annihilation

K. Saarinen, T. Laine, S. Kuisma et al. · Physical Review Letters · 1997 · 491 citations

Wide-bandgap Semiconductor, Gan Bulk Crystals, Positron Annihilation +15

Lattice parameters of gallium nitride

M. Leszczyński, H. Teisseyre, T. Suski et al. · Applied Physics Letters · 1996 · 409 citations

Materials Science, Aluminium Nitride, Engineering +10

Graphene Epitaxy by Chemical Vapor Deposition on SiC

Włodek Strupiński, K. Grodecki, A. Wysmołek et al. · Nano Letters · 2011 · 341 citations

Exciton region reflectance of homoepitaxial GaN layers

K.P. Korona, A. Wysmołek, Kiriy P.A. et al. · Applied Physics Letters · 1996 · 145 citations

Semiconductors, Wide-bandgap Semiconductor, Engineering +12

Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

K. Pakuła, A. Wysmołek, K.P. Korona et al. · Solid State Communications · 1996 · 131 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Substrates +10