R. Stępniewski - Concepedia

Author

R. Stępniewski

Also Known As

R . Stepniewski, R Stepniewski, R Stȩpniewski, R. STĘPNIEWSKI, R. St?pniewski, R. Stepniewski, R. Ste̢pniewski, R. Stȩpniewski, R. Stępniewski, R. Stȩpniewski

135

Publications

2.6K

Citations

H-Index

Concepts

All Affiliations

University of Warsaw Centre National de la Recherche Scientifique Polish Academy of Sciences Laboratoire National des Champs Magnétiques Intenses Institute of Electronic Materials Technology

About

R. Stępniewski is an author at University of Warsaw specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	21	34	1.7K
2	Engineering	20	33	1.7K
3	Natural Sciences	11	11	946
4	Chemistry	3	3	88
5	Electrical Engineering	2	2	181

R. Stępniewski

Publications

2.3K

Citations

H-Index

Page 1

	Year	Citations
Observation of Native Ga Vacancies in GaN by Positron Annihilation K. Saarinen, T. Laine, S. Kuisma, Physical Review Letters Wide-bandgap SemiconductorGan Bulk CrystalsPositron AnnihilationEngineeringYellow Luminescence	1997	491
Graphene Epitaxy by Chemical Vapor Deposition on SiC Włodek Strupiński, K. Grodecki, A. Wysmołek, Nano Letters	2011	341
Exciton region reflectance of homoepitaxial GaN layers K.P. Korona, A. Wysmołek, Kiriy P.A., Applied Physics Letters SemiconductorsWide-bandgap SemiconductorEngineeringPhysicsOptical Properties	1996	145
Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates K. Pakuła, A. Wysmołek, K.P. Korona, Solid State Communications Wide-bandgap SemiconductorElectrical EngineeringGan SubstratesEngineeringPhysics	1996	131
Quasiclassical cyclotron resonance of Dirac fermions in highly doped graphene A. M. Witowski, M. Orlita, R. Stępniewski, Physical Review B EngineeringMagnetic ResonanceQuasiclassical ResponseDirac FermionsNanoelectronics	2010	94
Polariton effects in reflectance and emission spectra of homoepitaxial GaN R. Stępniewski, K.P. Korona, A. Wysmołek, Physical review. B, Condensed matter EngineeringSemiconductorsPolariton DynamicOptical PropertiesQuantum Materials	1997	91
Auger recombination within Landau levels in a two-dimensional electron gas M. Potemski, R. Stępniewski, J. C. Maan, Physical Review Letters Auger RecombinationEngineeringElectron SpectroscopyQuantum MaterialsAuger Processes	1991	73
Recombination of excitons bound to oxygen and silicon donors in freestanding GaN A. Wysmołek, K.P. Korona, R. Stępniewski, Physical review. B, Condensed matter Wide-bandgap SemiconductorSemiconductor TechnologyPhotoluminescenceEngineeringPhysics	2002	65
Transmission electron microscopy and scanning tunneling microscopy investigations of graphene on 4H-SiC(0001) J. Borysiuk, R. Bożek, Włodek Strupiński, Journal of Applied Physics NanosheetEngineeringTransmission Electron MicroscopySemiconductorsGraphene Planes	2009	61
Symmetry of excitons in GaN R. Stępniewski, M. Potemski, A. Wysmołek, Physical review. B, Condensed matter Wide-bandgap SemiconductorEngineeringMagnetic ResonanceMagnetismQuantum Materials	1999	50

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